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| FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP13007 High Voltage Fast-Switching NPN Power Transistor * High Voltage Capability * High Switching Speed * Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current TC = 25C unless otherwise noted Parameter Value 700 400 9 8 16 4 80 150 -65 ~ 150 Units V V V A A A W C C Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJP13007 Rev. D FJP13007 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol BVCEO IEBO hFE1 hFE2 VCE(sat) TC = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage Conditions IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 25 Min. 400 Typ. Max 1 Units V mA 8 5 60 30 1.0 2.0 3.0 1.2 1.6 V V V V V MHz 110 1.6 3.0 0.7 pF s s s VBE(sat) fT Cob tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storge Time Fall Time 4 * Pulse Test: PW 300s, Duty Cycle 2% hFE Classification Classification hFE1 H1 15 ~ 28 H2 26 ~ 39 2 FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics Figure 1. DC Current Gain 100 Figure 2. Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 VCE = 5V I C = 3 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 0.1 VCE(sat) 1 0.1 1 10 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance 1000 1000 Figure 4. Turn On Time Cob[pF], OUTPUT CAPACITANCE tR, tD [ns], TURN ON TIME 100 tR 100 10 tD, VBE(off)=5V VCC=125V IC=5IB 1 0.1 1 10 100 1000 10 0.1 1 10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time 10000 Figure 6. Forward Biased Safe Operating Area 100 tSTG, tF [ns], TURN OFF TIME VCC=125V IC=5IB IC[A], COLLECTOR CURRENT tSTG 1000 10s 10 DC 1ms 100s 1 100 tF 0.1 10 0.1 1 10 0.01 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 3 FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Reverse Biased Safe Operating Area 100 Figure 8. Power Derating 100 90 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 80 70 60 50 40 30 20 10 1 0.1 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE 4 FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters 5 FJP13007 Rev. D www.fairchildsemi.com FJP13007 High Voltage Fast-Switching NPN Power Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 6 FJP13007 Rev. D www.fairchildsemi.com |
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